Infineon Technologies-BFR460L3E6327XTMA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5.8V
Frequency - Transition:	22GHz
Noise Figure (dB Typ @ f):	1.1dB ~ 1.35dB @ 1.8GHz ~ 3GHz
Gain:	16dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 20mA, 3V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	PG-TSLP-3-1

Infineon Technologies BFR460L3E6327XTMA1