Infineon Technologies-BFR380TE6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	9V
Frequency - Transition:	14GHz
Noise Figure (dB Typ @ f):	1.1dB @ 1.8GHz
Gain:	12.5dB
Power - Max:	380mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 40mA, 3V
Current - Collector (Ic) (Max):	80mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	PG-SC-75

Infineon Technologies BFR380TE6327