Infineon Technologies-BFR360L3E6765XTMA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	9V
Frequency - Transition:	14GHz
Noise Figure (dB Typ @ f):	1dB ~ 1.3dB @ 1.8GHz ~ 3GHz
Gain:	11.5dB ~ 16dB
Power - Max:	210mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 15mA, 3V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	PG-TSLP-3-1

Infineon Technologies BFR360L3E6765XTMA1