Infineon Technologies-BFR360FH6765XTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	9V
Frequency - Transition:	14GHz
Noise Figure (dB Typ @ f):	1dB @ 1.8GHz
Gain:	15.5dB
Power - Max:	210mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 15mA, 3V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-723
Supplier Device Package:	PG-TSFP-3

Infineon Technologies BFR360FH6765XTSA1