Infineon Technologies-BFR35APE6327HTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	5GHz
Noise Figure (dB Typ @ f):	1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Gain:	10.5dB ~ 16dB
Power - Max:	280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 15mA, 8V
Current - Collector (Ic) (Max):	45mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	PG-SOT23

Infineon Technologies BFR35APE6327HTSA1