Infineon Technologies-BFR193L3E6327XTMA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Gain:	12.5dB ~ 19dB
Power - Max:	580mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 30mA, 8V
Current - Collector (Ic) (Max):	80mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-101, SOT-883
Supplier Device Package:	PG-TSLP-3-1

Infineon Technologies BFR193L3E6327XTMA1