Infineon Technologies-BFR182E-6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	1.3dB @ 1.8GHz
Gain:	9.5dB
Power - Max:	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 8V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23

Infineon Technologies BFR182E-6327