Infineon Technologies-BFR106E6327HTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	5GHz
Noise Figure (dB Typ @ f):	1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz
Gain:	8.5dB ~ 13dB
Power - Max:	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 70mA, 8V
Current - Collector (Ic) (Max):	210mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	PG-SOT23

Infineon Technologies BFR106E6327HTSA1