Infineon Technologies-BFQ790H6327XTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	6.1V
Frequency - Transition:	1.85GHz
Noise Figure (dB Typ @ f):	2.6dB @ 1.8GHz
Gain:	17dB
Power - Max:	1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 250mA, 5V
Current - Collector (Ic) (Max):	300mA
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PG-SOT89

Infineon Technologies BFQ790H6327XTSA1