Infineon Technologies-BFQ19SH6327XTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	5.5GHz
Noise Figure (dB Typ @ f):	3dB @ 1.8GHz
Gain:	7dB
Power - Max:	1W
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 70mA, 8V
Current - Collector (Ic) (Max):	120mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PG-SOT89

Infineon Technologies BFQ19SH6327XTSA1