Infineon Technologies-BFP740E6327HTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.7V
Frequency - Transition:	42GHz
Noise Figure (dB Typ @ f):	0.5dB ~ 0.85dB @ 1.8GHz ~ 6GHz
Gain:	27dB
Power - Max:	160mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 25mA, 3V
Current - Collector (Ic) (Max):	30mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-3D

Infineon Technologies BFP740E6327HTSA1