Infineon Technologies-BFP720H6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.7V
Frequency - Transition:	45GHz
Noise Figure (dB Typ @ f):	0.4dB ~ 0.95dB @ 150MHz ~ 10GHz
Gain:	10.5dB ~ 28.5dB
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 13mA, 3V
Current - Collector (Ic) (Max):	25mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-4-2

Infineon Technologies BFP720H6327