Infineon Technologies-BFP720FE6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.7V
Frequency - Transition:	45GHz
Noise Figure (dB Typ @ f):	0.4dB ~ 1dB @ 150MHz ~ 10GHz
Gain:	10.5dB ~ 28dB
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 13mA, 3V
Current - Collector (Ic) (Max):	25mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD, Flat Leads
Supplier Device Package:	4-TSFP

Infineon Technologies BFP720FE6327