Infineon Technologies-BFP650E6327HTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.5V
Frequency - Transition:	37GHz
Noise Figure (dB Typ @ f):	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain:	10.5dB ~ 21.5dB
Power - Max:	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	110 @ 80mA, 3V
Current - Collector (Ic) (Max):	150mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-3D

Infineon Technologies BFP650E6327HTSA1