Infineon Technologies-BFP620E7764BTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	2.8V
Frequency - Transition:	65GHz
Noise Figure (dB Typ @ f):	0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain:	21.5dB
Power - Max:	185mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	110 @ 50mA, 1.5V
Current - Collector (Ic) (Max):	80mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-3D

Infineon Technologies BFP620E7764BTSA1