Infineon Technologies-BFP540FESDE6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5V
Frequency - Transition:	30GHz
Noise Figure (dB Typ @ f):	0.9dB ~ 1.4dB @ 1.8GHz
Gain:	20dB
Power - Max:	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	50 @ 20mA, 3.5V
Current - Collector (Ic) (Max):	80mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD, Flat Leads
Supplier Device Package:	4-TSFP

Infineon Technologies BFP540FESDE6327