Infineon Technologies-BFP520FE6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	3.5V
Frequency - Transition:	45GHz
Noise Figure (dB Typ @ f):	0.95dB @ 1.8GHz
Gain:	22.5dB
Power - Max:	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 20mA, 2V
Current - Collector (Ic) (Max):	40mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD, Flat Leads
Supplier Device Package:	4-TSFP

Infineon Technologies BFP520FE6327