Infineon Technologies-BFP460E6327HTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5.8V
Frequency - Transition:	22GHz
Noise Figure (dB Typ @ f):	0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
Gain:	12.5dB ~ 26.5dB
Power - Max:	230mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 20mA, 3V
Current - Collector (Ic) (Max):	70mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-4-2

Infineon Technologies BFP460E6327HTSA1