Infineon Technologies-BFP420H6801XTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	5V
Frequency - Transition:	25GHz
Noise Figure (dB Typ @ f):	1.1dB @ 1.8GHz
Gain:	21dB
Power - Max:	160mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 20mA, 4V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-3D

Infineon Technologies BFP420H6801XTSA1