Infineon Technologies-BFP196WE6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	7.5GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain:	12.5dB ~ 19dB
Power - Max:	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 50mA, 8V
Current - Collector (Ic) (Max):	150mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-4

Infineon Technologies BFP196WE6327