Infineon Technologies-BFP183WE6327BTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Gain:	22dB
Power - Max:	450mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 15mA, 8V
Current - Collector (Ic) (Max):	65mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-3D

Infineon Technologies BFP183WE6327BTSA1