Infineon Technologies-BFP182RE7764HTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	8GHz
Noise Figure (dB Typ @ f):	0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain:	22dB
Power - Max:	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 10mA, 8V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-143R
Supplier Device Package:	PG-SOT143-4-1

Infineon Technologies BFP182RE7764HTSA1