Infineon Technologies-BFP 650F E6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.5V
Frequency - Transition:	42GHz
Noise Figure (dB Typ @ f):	0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz
Gain:	11dB ~ 21.5dB
Power - Max:	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	110 @ 80mA, 3V
Current - Collector (Ic) (Max):	150mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	4-SMD, Flat Leads
Supplier Device Package:	4-TSFP

Infineon Technologies BFP 650F E6327