Infineon Technologies-BFP 640 H6433 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.5V
Frequency - Transition:	40GHz
Noise Figure (dB Typ @ f):	0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
Gain:	24dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	110 @ 30mA, 3V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-3D

Infineon Technologies BFP 640 H6433