Infineon Technologies-BFP 196R E6501 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	12V
Frequency - Transition:	7.5GHz
Noise Figure (dB Typ @ f):	1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain:	10.5dB ~ 16.5dB
Power - Max:	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	70 @ 50mA, 8V
Current - Collector (Ic) (Max):	150mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-253-4, TO-253AA
Supplier Device Package:	PG-SOT-143-3D

Infineon Technologies BFP 196R E6501