Infineon Technologies-BFN 19 E6327 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	PNP
Current - Collector (Ic) (Max):	200 mA
Voltage - Collector Emitter Breakdown (Max):	300 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 2mA, 20mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	30 @ 30mA, 10V
Power - Max:	1 W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PG-SOT89

Infineon Technologies BFN 19 E6327