Infineon Technologies-BFG135AE6327XT - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	6GHz
Noise Figure (dB Typ @ f):	1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Gain:	9dB ~ 14dB
Power - Max:	1W
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 100mA, 8V
Current - Collector (Ic) (Max):	150mA
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4

Infineon Technologies BFG135AE6327XT