Infineon Technologies-BFG 235 E6327 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	5.5GHz
Noise Figure (dB Typ @ f):	1.7dB @ 900MHz
Gain:	12.5dB
Power - Max:	2W
DC Current Gain (hFE) (Min) @ Ic, Vce:	75 @ 200mA, 8V
Current - Collector (Ic) (Max):	300mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4

Infineon Technologies BFG 235 E6327