Infineon Technologies-BF799E6327HTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	20V
Frequency - Transition:	800MHz
Noise Figure (dB Typ @ f):	3dB @ 100MHz
Gain:	-
Power - Max:	280mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 20mA, 10V
Current - Collector (Ic) (Max):	35mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	PG-SOT23

Infineon Technologies BF799E6327HTSA1