Infineon Technologies-BF776H6327XTSA1 - Transistors - Bipolar (BJT) - RF Product Specifications and Latest Quotes

Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	4.7V
Frequency - Transition:	46GHz
Noise Figure (dB Typ @ f):	0.8dB ~ 1.3dB @ 1.8GHz ~ 6GHz
Gain:	24dB
Power - Max:	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 30mA, 3V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-82A, SOT-343
Supplier Device Package:	PG-SOT343-3D

Infineon Technologies BF776H6327XTSA1