Infineon Technologies-BF517E6327HTSA1 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	25 mA
Voltage - Collector Emitter Breakdown (Max):	15 V
Vce Saturation (Max) @ Ib, Ic:	400mV @ 1mA, 10mA
Current - Collector Cutoff (Max):	10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 2mA, 1V
Power - Max:	280 mW
Frequency - Transition:	2.5GHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	PG-SOT23

Infineon Technologies BF517E6327HTSA1