Infineon Technologies-BCX5616H6327XTSA1 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BCX5616H6327XTSA1	BCX5316H6327XTSA1	BCX5416H6327XTSA1	BCX5516H6327XTSA1	BCX5610H6327XTSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Not For New Designs	Not For New Designs	Not For New Designs	Not For New Designs	Not For New Designs
Transistor Type	NPN	PNP	NPN	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	45 V	60 V	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V	100 @ 150mA, 2V	100 @ 150mA, 2V	100 @ 150mA, 2V	63 @ 150mA, 2V
Power - Max	2 W	2 W	2 W	2 W	2 W
Frequency - Transition	100MHz	125MHz	100MHz	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	PG-SOT89	PG-SOT89	PG-SOT89	PG-SOT89	PG-SOT89

Infineon Technologies BCX5616H6327XTSA1

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	2 W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PG-SOT89