Infineon Technologies-BCX5616E6327HTSA1 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BCX5616E6327HTSA1	BCX5316E6327HTSA1	BCX5516E6327HTSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Obsolete	Obsolete	Active
Transistor Type	NPN	PNP	NPN
Current - Collector (Ic) (Max)	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	80 V	80 V	60 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V	100 @ 150mA, 2V	100 @ 150mA, 2V
Power - Max	2 W	2 W	2 W
Frequency - Transition	100MHz	125MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	PG-SOT89	PG-SOT89	PG-SOT89-4-2

Infineon Technologies BCX5616E6327HTSA1

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	80 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	2 W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PG-SOT89