Infineon Technologies-BCX5116E6327HTSA1 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BCX5116E6327HTSA1	BCX5516E6327HTSA1	BCX5216E6327HTSA1	BCX5316E6327HTSA1
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Infineon Technologies
Product Status	Active	Active	Obsolete	Obsolete
Transistor Type	PNP	NPN	PNP	PNP
Current - Collector (Ic) (Max)	1 A	1 A	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	45 V	60 V	60 V	80 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V	100 @ 150mA, 2V	100 @ 150mA, 2V	100 @ 150mA, 2V
Power - Max	2 W	2 W	2 W	2 W
Frequency - Transition	125MHz	100MHz	125MHz	125MHz
Operating Temperature	150°C (TJ)	150°C (TJ)	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-243AA	TO-243AA	TO-243AA	TO-243AA
Supplier Device Package	PG-SOT89-4-2	PG-SOT89-4-2	PG-SOT89	PG-SOT89

Infineon Technologies BCX5116E6327HTSA1

Transistor Type:	PNP
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	2 W
Frequency - Transition:	125MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	PG-SOT89-4-2