Infineon Technologies-BCW66KHB6327HTLA1 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	800 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	450mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	250 @ 100mA, 1V
Power - Max:	500 mW
Frequency - Transition:	170MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	PG-SOT23

Infineon Technologies BCW66KHB6327HTLA1