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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
BCR555E6433HTMA1
BCR555E6433HTMA1 Image
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Infineon Technologies BCR555E6433HTMA1
Manufacturer No:
BCR555E6433HTMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BCR555E6433HTMA1 Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS PNP 300MW SOT23-3
Delivery:
Payment:
Product Attributes
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
2.2 kOhms
Resistor - Emitter Base (R2):
10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
150 MHz
Power - Max:
330 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
PG-SOT23
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Quantity:
11,977
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