BCR505E6327HTSA1
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Infineon Technologies BCR505E6327HTSA1

Manufacturer No:
BCR505E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BCR505E6327HTSA1 Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS NPN 0.33W SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:100 MHz
Power - Max:330 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BCR505E6327HTSA1 BCR555E6327HTSA1   BCR503E6327HTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V 70 @ 50mA, 5V 40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA 300mV @ 2.5mA, 50mA 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
Frequency - Transition 100 MHz 150 MHz 100 MHz
Power - Max 330 mW 330 mW 330 mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23 PG-SOT23 PG-SOT23

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