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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
BCR35PNE6327BTSA1
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Infineon Technologies BCR35PNE6327BTSA1
Manufacturer No:
BCR35PNE6327BTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BCR35PNE6327BTSA1 Datasheet
ECAD Model:
-
Description:
TRANS NPN/PNP PREBIAS SOT363
Delivery:
Payment:
Product Attributes
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max):
100mA
Voltage - Collector Emitter Breakdown (Max):
50V
Resistor - Base (R1):
10kOhms
Resistor - Emitter Base (R2):
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
-
Frequency - Transition:
150MHz
Power - Max:
250mW
Mounting Type:
Surface Mount
Package / Case:
6-VSSOP, SC-88, SOT-363
Supplier Device Package:
PG-SOT363-PO
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Quantity:
443
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