BCR196WE6327
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Infineon Technologies BCR196WE6327

Manufacturer No:
BCR196WE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BCR196WE6327 Datasheet
ECAD Model:
-
Description:
BIPOLAR DIGITAL TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):70 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):47 kOhms
Resistor - Emitter Base (R2):22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:150 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3
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Similar Products

Part Number BCR196WE6327 BCR196WH6327   BCR166WE6327   BCR196E6327   BCR196TE6327  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased - PNP - Pre-Biased -
Current - Collector (Ic) (Max) 70 mA 70 mA - 70 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V - 50 V -
Resistor - Base (R1) 47 kOhms 47 kOhms - 47 kOhms -
Resistor - Emitter Base (R2) 22 kOhms 22 kOhms - 22 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5mA, 5V 50 @ 5mA, 5V - 50 @ 5mA, 5V -
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA - 300mV @ 500µA, 10mA -
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) - 100nA (ICBO) -
Frequency - Transition 150 MHz 150 MHz - 150 MHz -
Power - Max 250 mW 250 mW - 200 mW -
Mounting Type Surface Mount Surface Mount - Surface Mount -
Package / Case SC-70, SOT-323 SC-70, SOT-323 - TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package PG-SOT323-3 PG-SOT323-3 - PG-SOT23-3-11 -

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