BCR166E6327
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Infineon Technologies BCR166E6327

Manufacturer No:
BCR166E6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BCR166E6327 Datasheet
ECAD Model:
-
Description:
BIPOLAR DIGITAL TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:160 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
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In Stock

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Similar Products

Part Number BCR166E6327 BCR196E6327   BCR166WE6327   BCR146E6327  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased - -
Current - Collector (Ic) (Max) 100 mA 70 mA - -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V - -
Resistor - Base (R1) 4.7 kOhms 47 kOhms - -
Resistor - Emitter Base (R2) 47 kOhms 22 kOhms - -
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V 50 @ 5mA, 5V - -
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA - -
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) - -
Frequency - Transition 160 MHz 150 MHz - -
Power - Max 200 mW 200 mW - -
Mounting Type Surface Mount Surface Mount - -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 - -
Supplier Device Package PG-SOT23-3-11 PG-SOT23-3-11 - -

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