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Discrete Semiconductor Products
Transistors - Bipolar (BJT) - Single, Pre-Biased
BCR166B6327HTLA1
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Infineon Technologies BCR166B6327HTLA1
Manufacturer No:
BCR166B6327HTLA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BCR166B6327HTLA1 Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS PNP 200MW SOT23-3
Delivery:
Payment:
Product Attributes
Transistor Type:
PNP - Pre-Biased
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Resistor - Base (R1):
4.7 kOhms
Resistor - Emitter Base (R2):
47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Frequency - Transition:
160 MHz
Power - Max:
200 mW
Mounting Type:
Surface Mount
Package / Case:
TO-236-3, SC-59, SOT-23-3
Supplier Device Package:
PG-SOT23
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Quantity:
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