BCR158WH6327
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Infineon Technologies BCR158WH6327

Manufacturer No:
BCR158WH6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BCR158WH6327 Datasheet
ECAD Model:
-
Description:
BIPOLAR DIGITAL TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:200 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3
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In Stock

$0.04
13,459

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Similar Products

Part Number BCR158WH6327 BCR108WH6327   BCR148WH6327   BCR158WE6327  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V -
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms 47 kOhms -
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 47 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V 70 @ 5mA, 5V 70 @ 5mA, 5V -
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA -
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) -
Frequency - Transition 200 MHz 170 MHz 100 MHz -
Power - Max 250 mW 250 mW 250 mW -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 -
Supplier Device Package PG-SOT323-3 PG-SOT323-3 PG-SOT323-3 -

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