BCR142WH6327
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Infineon Technologies BCR142WH6327

Manufacturer No:
BCR142WH6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BCR142WH6327 Datasheet
ECAD Model:
-
Description:
BIPOLAR DIGITAL TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:150 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323-3
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Similar Products

Part Number BCR142WH6327 BCR192WH6327   BCR148WH6327   BCR141WH6327  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
Transistor Type NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 22 kOhms 22 kOhms 47 kOhms 22 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 47 kOhms 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V 70 @ 5mA, 5V 70 @ 5mA, 5V 50 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
Frequency - Transition 150 MHz 200 MHz 100 MHz 130 MHz
Power - Max 250 mW 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323-3 PG-SOT323-3 PG-SOT323-3 PG-SOT323-3

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