BCR133TE6327
  • Share:

Infineon Technologies BCR133TE6327

Manufacturer No:
BCR133TE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BCR133TE6327 Datasheet
ECAD Model:
-
Description:
BIPOLAR DIGITAL TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:130 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
0 Remaining View Similar

In Stock

-
348

Please send RFQ , we will respond immediately.

Similar Products

Part Number BCR133TE6327 BCR133WE6327   BCR135TE6327  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type NPN - Pre-Biased - NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA - 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V - 50 V
Resistor - Base (R1) 10 kOhms - 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms - 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V - 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA - 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) - 100nA (ICBO)
Frequency - Transition 130 MHz - 150 MHz
Power - Max 200 mW - 200 mW
Mounting Type Surface Mount - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-11 - PG-SOT23-3-11

Related Product By Categories

NHDTA114ETR
NHDTA114ETR
Nexperia USA Inc.
NHDTA114ET/SOT23/TO-236AB
RN1305,LF
RN1305,LF
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A USM
DDTC123ECA-7-F
DDTC123ECA-7-F
Diodes Incorporated
TRANS PREBIAS NPN 200MW SOT23-3
RN2305(TE85L,F)
RN2305(TE85L,F)
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.1A USM
UNR511100L
UNR511100L
Panasonic Electronic Components
TRANS PREBIAS PNP 150MW SMINI3
FJV3106RMTF
FJV3106RMTF
onsemi
TRANS PREBIAS NPN 200MW SOT23-3
BCR 185F E6327
BCR 185F E6327
Infineon Technologies
TRANS PREBIAS PNP 250MW TSLP-3
BCR 519 E6327
BCR 519 E6327
Infineon Technologies
TRANS PREBIAS NPN 300MW SOT23-3
UNR5212G0L
UNR5212G0L
Panasonic Electronic Components
TRANS PREBIAS NPN 150MW SMINI3
DTB123YKT146
DTB123YKT146
Rohm Semiconductor
TRANS PREBIAS PNP 200MW SMT3
DTA023EMT2L
DTA023EMT2L
Rohm Semiconductor
TRANS PREBIAS PNP 50V VMT3
DTC114TMFHAT2L
DTC114TMFHAT2L
Rohm Semiconductor
NPN DIGITAL TRANSISTOR (CORRESPO

Related Product By Brand

EVALAUDIOMA12070TOBO1
EVALAUDIOMA12070TOBO1
Infineon Technologies
2 CH 80W/CH MERUS CLASS D AMP
BCR169SE6327BTSA1
BCR169SE6327BTSA1
Infineon Technologies
TRANS 2PNP PREBIAS 0.25W SOT363
SPD02N80C3ATMA1
SPD02N80C3ATMA1
Infineon Technologies
MOSFET N-CH 800V 2A TO252-3
IRFZ44ZS
IRFZ44ZS
Infineon Technologies
MOSFET N-CH 55V 51A D2PAK
AT8992-A2-T-1
AT8992-A2-T-1
Infineon Technologies
IC SWITCH PHY 64-TQFP
IRU1015-33CM
IRU1015-33CM
Infineon Technologies
IC REG LINEAR 3.3V 1.5A TO263
TLI4970D050T5XUMA1
TLI4970D050T5XUMA1
Infineon Technologies
SENSOR CURRENT HALL 50A 8TISON
CY9AF008LWPMC-G-UNE2
CY9AF008LWPMC-G-UNE2
Infineon Technologies
IC MCU MICOM FLASH 64LQFP
MB90224PF-GT-236-BND
MB90224PF-GT-236-BND
Infineon Technologies
IC MCU 16BIT 96KB MROM 120PQFP
MB90F020CPMT-GS-9093
MB90F020CPMT-GS-9093
Infineon Technologies
IC MCU 120LQFP
S25FL256SAGBHI203
S25FL256SAGBHI203
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA
CY62147EV30LL-45B2XAT
CY62147EV30LL-45B2XAT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA