BCR133TE6327
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Infineon Technologies BCR133TE6327

Manufacturer No:
BCR133TE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BCR133TE6327 Datasheet
ECAD Model:
-
Description:
BIPOLAR DIGITAL TRANSISTOR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:130 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23-3-11
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Similar Products

Part Number BCR133TE6327 BCR133WE6327   BCR135TE6327  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type NPN - Pre-Biased - NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA - 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V - 50 V
Resistor - Base (R1) 10 kOhms - 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms - 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V - 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA - 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) - 100nA (ICBO)
Frequency - Transition 130 MHz - 150 MHz
Power - Max 200 mW - 200 mW
Mounting Type Surface Mount - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package PG-SOT23-3-11 - PG-SOT23-3-11

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