BCR108WH6327XTSA1
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Infineon Technologies BCR108WH6327XTSA1

Manufacturer No:
BCR108WH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
BCR108WH6327XTSA1 Datasheet
ECAD Model:
-
Description:
TRANS PREBIAS NPN 250MW SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:170 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:PG-SOT323
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$0.04
12,680

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Similar Products

Part Number BCR108WH6327XTSA1 BCR148WH6327XTSA1   BCR158WH6327XTSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 47 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms 47 kOhms 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V 70 @ 5mA, 5V 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
Frequency - Transition 170 MHz 100 MHz 200 MHz
Power - Max 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package PG-SOT323 PG-SOT323 PG-SOT323

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