Infineon Technologies-BCR 512 B6327 - Transistors - Bipolar (BJT) - Single, Pre-Biased Product Specifications and Latest Quotes

Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	50 V
Resistor - Base (R1):	4.7 kOhms
Resistor - Emitter Base (R2):	4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):	100nA (ICBO)
Frequency - Transition:	100 MHz
Power - Max:	330 mW
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	PG-SOT23

Infineon Technologies BCR 512 B6327