Infineon Technologies-BCP 54-16 H6779 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	BCP 54-16 H6779	BCP 54-16 H6778
Manufacturer	Infineon Technologies	Infineon Technologies
Product Status	Obsolete	Obsolete
Transistor Type	NPN	NPN
Current - Collector (Ic) (Max)	1 A	1 A
Voltage - Collector Emitter Breakdown (Max)	45 V	45 V
Vce Saturation (Max) @ Ib, Ic	500mV @ 50mA, 500mA	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 2V	100 @ 150mA, 2V
Power - Max	2 W	2 W
Frequency - Transition	100MHz	100MHz
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount
Package / Case	TO-261-4, TO-261AA	TO-261-4, TO-261AA
Supplier Device Package	PG-SOT223-4	PG-SOT223-4

Infineon Technologies BCP 54-16 H6779

Transistor Type:	NPN
Current - Collector (Ic) (Max):	1 A
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 2V
Power - Max:	2 W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-261-4, TO-261AA
Supplier Device Package:	PG-SOT223-4