Infineon Technologies-BC817UPNE6327HTSA1 - Transistors - Bipolar (BJT) - Arrays Product Specifications and Latest Quotes

Transistor Type:	NPN, PNP
Current - Collector (Ic) (Max):	500mA
Voltage - Collector Emitter Breakdown (Max):	45V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 100mA, 1V
Power - Max:	330mW
Frequency - Transition:	170MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-74, SOT-457
Supplier Device Package:	PG-SC74-6

Infineon Technologies BC817UPNE6327HTSA1