Infineon Technologies-BC817K25WH6327XTSA1 - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Transistor Type:	NPN
Current - Collector (Ic) (Max):	500 mA
Voltage - Collector Emitter Breakdown (Max):	45 V
Vce Saturation (Max) @ Ib, Ic:	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 100mA, 1V
Power - Max:	250 mW
Frequency - Transition:	170MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	PG-SOT323

Infineon Technologies BC817K25WH6327XTSA1