BAS7002LE6327
  • Share:

Infineon Technologies BAS7002LE6327

Manufacturer No:
BAS7002LE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
BAS7002LE6327 Datasheet
ECAD Model:
-
Description:
RECTIFIER DIODE, SCHOTTKY
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):70 V
Current - Average Rectified (Io):70mA (DC)
Voltage - Forward (Vf) (Max) @ If:1 V @ 15 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):100 ps
Current - Reverse Leakage @ Vr:100 nA @ 50 V
Capacitance @ Vr, F:1.5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SOD-882
Supplier Device Package:PG-TSLP-2-1
Operating Temperature - Junction:150°C
0 Remaining View Similar

In Stock

-
402

Please send RFQ , we will respond immediately.

Similar Products

Part Number BAS7002LE6327 BAS70-02LE6327  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 70 V 70 V
Current - Average Rectified (Io) 70mA (DC) 70mA (DC)
Voltage - Forward (Vf) (Max) @ If 1 V @ 15 mA 1 V @ 15 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 100 ps 100 ps
Current - Reverse Leakage @ Vr 100 nA @ 50 V 100 nA @ 50 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SOD-882 SOD-882
Supplier Device Package PG-TSLP-2-1 PG-TSLP-2-1
Operating Temperature - Junction 150°C 150°C

Related Product By Categories

SF1200-TAP
SF1200-TAP
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 1A SOD57
S1Q M3G
S1Q M3G
Taiwan Semiconductor Corporation
1A, 1200V, STANDARD RECOVERY REC
VS-50WQ10FN-M3
VS-50WQ10FN-M3
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 5.5A DPAK
SS5P10-M3/87A
SS5P10-M3/87A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 5A TO277A
AR4PJ-M3/87A
AR4PJ-M3/87A
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 600V 2A TO277A
DPG60IM400QB
DPG60IM400QB
IXYS
DIODE GEN PURP 400V 60A TO3P
MBR1060/45
MBR1060/45
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 10A TO220AC
GPP60BHE3/54
GPP60BHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 6A P600
VS-50WQ04FNTRRPBF
VS-50WQ04FNTRRPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 5.5A DPAK
FR307
FR307
SMC Diode Solutions
DIODE GEN PURP 1KV 3A DO201AD
SBLB10L25HE3_A/I
SBLB10L25HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 25V 10A TO263AB
HERAF807G C0G
HERAF807G C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 8A ITO220AC

Related Product By Brand

BA885E7631HTMA1
BA885E7631HTMA1
Infineon Technologies
RF DIODE PIN 50V SC79-2
BCR 133F B6327
BCR 133F B6327
Infineon Technologies
TRANS PREBIAS NPN 250MW TSFP-3
IPD50N06S2L13ATMA2
IPD50N06S2L13ATMA2
Infineon Technologies
MOSFET N-CH 55V 50A TO252-31
IPI80N06S405AKSA2
IPI80N06S405AKSA2
Infineon Technologies
MOSFET N-CHANNEL_55/60V
IPD35N10S3L-26
IPD35N10S3L-26
Infineon Technologies
IPD35N10 - 75V-100V N-CHANNEL AU
SAK-XC888-6FFI 5V AC
SAK-XC888-6FFI 5V AC
Infineon Technologies
IC MCU 8BIT 24KB FLASH 64TQFP
TLF30682QVS01XUMA1
TLF30682QVS01XUMA1
Infineon Technologies
DC/DC CONVERTER
S6E2CC9H0AGV20000
S6E2CC9H0AGV20000
Infineon Technologies
IC MCU 32BIT 1.5MB FLASH 144LQFP
S29AL008J70BFN020
S29AL008J70BFN020
Infineon Technologies
IC FLASH 8MBIT PARALLEL 48FBGA
S29GL512S10DHA023
S29GL512S10DHA023
Infineon Technologies
IC FLASH 512MBIT PARALLEL 64FBGA
CY62128BNLL-70ZXAT
CY62128BNLL-70ZXAT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32TSOP I
CY9AF114NABGL-GK9E1
CY9AF114NABGL-GK9E1
Infineon Technologies
IC MCU 32BIT 256KB FLASH 112BGA